A scattering-angle limiting type electron-beam exposure method in which a mask having a scattering region is used, and a limiting aperture is set to control the amount of electrons scattered by the mask that pass through the limiting aperture, whereby a scattering contrast is formed from differences in the scattering angles of electrons. By changing the thickness of the scattering region of the mask according to the pattern density, the scattering angles of the scattered electrons are controlled and the amount of the scattered electrons that pass through the limiting aperture is adjusted.
The present invention relates to a test method of a mask for electron-beam exposure which has a pattern region in which, by forming an electron-beam scatterer in prescribed shape on an electron-beam transmittable thin film, a scattering region with said electron-beam scatterer and a membrane region without said electron-beam scatterer are formed in prescribed pattern shape; wherein electron-beam irradiation onto a tested mask is carried out in a plurality of times, with each irradiated region subjected to irradiation at a time being scanned with the electron beam, and through detection of transmitted electrons which is made for each irradiated region subjected to irradiation at a time.
