|
Claims  |
|
|
What is claimed is:
1. A reduction-resistant dielectric ceramic compact comprising:
a solid solution comprising barium titanate as a primary component and an
auxiliary sintering agent which has an x-ray diffraction crystalline axis
ratio c/a in a temperature range of -25.degree. C. or above of
1.000.ltoreq.c/a.ltoreq.1.003 and a maximum peak for temperature
dependence of a dielectric constant measured at an electric strength of 2
Vrms/mm or less and at an AC frequency of 1 kHz at a temperature of below
-25.degree. C.,
wherein the primary component is represented by the formula
ABO.sub.3 +aR+bM, in which
ABO.sub.3 is a barium titanate-based perovskite compound having A-site and
B-site elements such that 1.000<A/B.ltoreq.1.035,
R is a compound containing at least one element selected from the group
consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu,
M is a compound containing at least one element selected from the group
consisting of Mn, Ni, Mg, Fe, Al, Cr and Zn,
and a and b are in moles such that 0.005.ltoreq.a.ltoreq.0.12, and
0.005.ltoreq.b.ltoreq.0.12.
2. A reduction-resistant dielectric ceramic compact according to claim 1,
wherein the auxiliary sintering agent is about 0.2 to 4 parts by weight
with respect to 100 parts by weight of the primary component.
3. A reduction-resistant dielectric ceramic compact according to claim 1,
wherein the primary component comprises X(Zr,Hf)O.sub.3 in which X is at
least one element selected from the group consisting of Ba, Sr and Ca.
4. A reduction-resistant dielectric ceramic compact according to claim 3,
wherein the amount of X(Zr,Hf)O.sub.3 is greater than zero up to about
0.20 mole with respect to 1 mole of the ABO.sub.3 in the primary
component.
5. A reduction-resistant dielectric ceramic compact according to claim 1,
wherein the primary component further comprises a compound D containing at
least one element selected from the group consisting of V, Nb, Ta, Mo, W,
Y, Sc, P, Al and Fe.
6. A reduction-resistant dielectric ceramic compact according to claim 5,
wherein the amount of D is more than zero up to about 0.02 mole with
respect to 1 mole of the ABO.sub.3 in the primary component.
7. A reduction-resistant dielectric ceramic compact according to claim 5,
wherein the primary component comprises X(Zr,Hf)O.sub.3 in which X is at
least one element selected from the group consisting of Ba, Sr and Ca.
8. A reduction-resistant dielectric ceramic compact according to claim 3,
wherein the amount of X(Zr,Hf)O.sub.3 and the amount of D are each greater
than zero up to about 0.20 mole with respect to 1 mole of the ABO.sub.3 in
the primary component.
9. A reduction-resistant dielectric ceramic compact according to claim 8,
wherein
ABO.sub.3 is a barium titanate-based perovskite compound represented by the
formula {(Ba.sub.1-x-y Sr.sub.x Ca.sub.y)O}.sub.m TiO.sub.2 in which
0.ltoreq.x+y.ltoreq.0.20 and 1.000<m.ltoreq.1.035, and the auxiliary
sintering agent is selected from the group consisting of a compound
containing boron, a compound containing silicon and a compound containing
boron and silicon, and
which further comprises, with respect to 100 parts by weight of the barium
titanate-based perovskite compound, a positive amount up to about 0.5 part
of a compound containing at least one element selected from the group
consisting of S, Na and K, and a positive amount up to about 5 parts of a
compound containing Cl.
10. A reduction-resistant dielectric ceramic compact according to claim 1,
wherein
ABO.sub.3 is a barium titanate-based perovskite compound represented by the
formula {(Ba.sub.1-x-y Sr.sub.x Ca.sub.y)O}.sub.m TiO.sub.2 in which
0.ltoreq.x+y.ltoreq.0.20 and 1.000<m.ltoreq.1.035, and
further comprises, with respect to 100 parts by weight of the barium
titanate-based perovskite compound, a positive amount up to about 0.5 part
of a compound containing at least one element selected from the group
consisting of S, Na and K, and a positive amount up to about 5 parts of a
compound containing Cl.
11. A reduction-resistant dielectric ceramic compact according to claim 1,
wherein the auxiliary sintering agent is selected from the group
consisting of a compound containing boron, a compound containing silicon
and a compound containing boron and silicon.
12. A reduction-resistant dielectric ceramic compact according to claim 11,
wherein the compound containing silicon is silicon oxide.
13. A laminated ceramic capacitor comprising:
a plurality of dielectric ceramic layers;
a plurality of internal electrodes each of which sandwiches at least a part
of a dielectric ceramic layer; and
a pair of external electrodes electrically connected to the internal
electrodes,
wherein the dielectric ceramic layers comprise a reduction-resistant
dielectric ceramic compact according to claim 9.
14. A laminated ceramic capacitor according to claim 13, wherein the
internal electrodes comprise nickel, a nickel alloy, copper or a copper
alloy.
15. A laminated ceramic capacitor according to claim 14, wherein each
external electrodes comprises a first sintered layer comprising a powdered
conductive metal and optionally glass frit, crystallized glass or ceramic;
and a second layer disposed on the first layer and which is a plating
layer.
16. A laminated ceramic capacitor comprising:
a plurality of dielectric ceramic layers;
a plurality of internal electrodes each of which sandwiches at least a part
of a dielectric ceramic layer; and
a pair of external electrodes electrically connected to the internal
electrodes,
wherein the dielectric ceramic layers comprise a reduction-resistant
dielectric ceramic compact according to claim 7.
17. A laminated ceramic capacitor according to claim 16, wherein the
internal electrodes comprise nickel, a nickel alloy, copper or a copper
alloy.
18. A laminated ceramic capacitor according to claim 17, wherein each
external electrodes comprises a first sintered layer comprising a powdered
conductive metal and optionally glass frit, crystallized glass or ceramic;
and a second layer disposed on the first layer and which is a plating
layer.
19. A laminated ceramic capacitor comprising:
a plurality of dielectric ceramic layers;
a plurality of internal electrodes each of which sandwiches at least a part
of a dielectric ceramic layer; and
a pair of external electrodes electrically connected to the internal
electrodes,
wherein the dielectric ceramic layers comprise a reduction-resistant
dielectric ceramic compact according to claim 1.
20. A laminated ceramic capacitor according to claim 19, wherein the
internal electrodes comprise nickel, a nickel alloy, copper or a copper
alloy.
21. A laminated ceramic capacitor according to claim 19, wherein each
external electrodes comprises a first sintered layer comprising a powdered
conductive metal and optionally glass frit, crystallized glass or ceramic;
and a second layer disposed on the first layer and which is a plating
layer. |
|
|
|
|
Claims  |
|
|
Description  |
|
|
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to reduction-resistant dielectric ceramic
compacts and laminated ceramic capacitors comprising dielectric ceramic
layers formed of the reduction-resistant dielectric ceramic compacts, and
more particularly, relates to a laminated ceramic capacitor which is
advantageously used in a high-frequency AC region or in an intermediate to
high DC voltage range and which comprises internal electrodes formed of a
base metal, and to a reduction-resistant dielectric ceramic compact for
forming dielectric ceramic layers for use in the laminated ceramic
capacitor.
2. Description of the Related Art
Heretofore, laminated ceramic capacitors are generally manufactured in a
manner as described below.
First, ceramic green sheets, which contain a dielectric material and are
coated with an electrode material for forming internal electrodes, are
prepared for forming dielectric ceramic layers. As the dielectric
material, a material primarily composed of, for example, BaTiO.sub.3 is
used. Next, the ceramic green sheets coated with this electrode material
are laminated to each other and are then bonded together by
thermo-compression bonding, and the laminate thus formed is fired, thereby
yielding a ceramic laminate having the internal electrodes. Subsequently,
external electrodes, which are electrically connected to the internal
electrodes, are provided on end surfaces of this ceramic laminate by
firing, whereby a laminated ceramic capacitor is obtained.
Consequently, a material which is not oxidized during firing of a ceramic
laminate has been generally selected as the material used for the internal
electrodes. For example, noble metals, such as platinum, gold, palladium
and a silver-palladium alloy, have been used as the materials for the
internal electrodes. However, even though these internal electrode
materials have superior characteristics, since they are significantly
expensive, these materials are most responsible for an increase in
manufacturing cost of the laminated ceramic capacitors.
Accordingly, a laminated ceramic capacitor has been proposed which uses a
relatively inexpensive base metal such as nickel or copper as the internal
electrode material in order to reduce the manufacturing cost.
However, these base metals mentioned above are easily oxidized at a high
temperature in an oxidizing atmosphere, and as a result, they cannot serve
as the internal electrodes. In order to use a base metal as the internal
electrodes for the laminated ceramic capacitor, firing for obtaining the
laminated ceramic capacitor must be performed in a neutral or a reducing
atmosphere.
In addition, when firing is performed at a low partial pressure of oxygen
in the neutral or the reducing atmosphere described above, the ceramic
compact for forming dielectric ceramic layers is significantly reduced,
and as a result, a problem may occur in that the ceramic compact starts to
have semiconductor characteristics.
Accordingly, as a reduction-resistant dielectric ceramic compact which is
not likely to have semiconductor characteristics even though fired at a
low partial pressure of oxygen for preventing oxidation of a base metal,
for example, a BaTiO.sub.3 -(Mg,Zn,Sr,Ca)O-B.sub.2 O.sub.3 -SiO.sub.2
-based dielectric ceramic compact disclosed in Japanese Examined Patent
Application Publication No. 61-14611, a (Ba,M,L)(Ti,R)O.sub.3 -based
dielectric ceramic compact (in which M is Mg or Zn, L is Ca or Sr, and R
is Sc, Y, or a rare earth element) disclosed in Japanese Unexamined Patent
Application Publication No. 7-272971, and the like have been proposed.
Concomitant with trends toward higher integration, improved performance and
lower price of electronic devices, laminated ceramic capacitors are
increasingly subject to more adverse usage conditions, and hence, lower
loss, improved insulating characteristics, improved breakdown voltages,
improved reliability, larger capacity, lower price and the like are
strongly required for the laminated ceramic capacitors.
In addition, laminated ceramic capacitors which can be used under high
frequency conditions of high voltage or large current are increasingly in
demand in recent years. The important properties required for these
laminated ceramic capacitor are low loss and low heat generation. The
reason for this is that when the loss and heat generation are large, the
life of the laminated ceramic capacitor itself is decreased. Furthermore,
due to the loss and the heat generation of the laminated ceramic
capacitor, an increase in temperature occurs in the circuit containing
them, and as a result, malfunctions of peripheral units and a decrease in
life thereof also occur.
The laminated ceramic capacitors are also increasingly used under high DC
voltage conditions. However, particularly in conventional laminated
ceramic capacitors using nickel as an internal electrode material which
are designed to be used under relatively low electric field conditions,
when used under high electric field conditions, the insulating
characteristics, breakdown voltage and reliability are degraded.
When a laminated ceramic capacitor is formed by using the dielectric
ceramic compact disclosed in Japanese Examined Patent Application
Publication No. 61-14611 or Japanese Unexamined Patent Application
Publication No. 7-272971, even though the rate of change in static
capacitance with temperature is not significant, there are shortcomings in
that the loss and the heat generation are significant when used under high
frequency conditions of high voltage or large current. In addition, since
the dielectric ceramic compact described above is reduction-resistant, a
base metal such as nickel can be used as the internal electrode material
when firing at a low partial pressure of oxygen is performed; however, the
firing at a low partial pressure of oxygen is hard firing for the
dielectric ceramic compact, and for example, when an obtained laminated
ceramic capacitor is used under high DC voltage conditions, there are
shortcomings in that the insulating resistance is low and that the
reliability is poor.
SUMMARY OF THE INVENTION
Accordingly, an object of the present invention is to provide a
reduction-resistant dielectric ceramic compact for advantageously forming
dielectric ceramic layers for use in, for example, a laminated ceramic
capacitor, which has a low loss and low heat generation when used under
high frequency conditions of high voltage or large current, and which
exhibits a stable insulating resistance under AC or DC high temperature
loading conditions.
Another object of the present invention is to provide, in addition to the
object described above, a laminated ceramic capacitor which can use a base
metal such as nickel or a nickel ally as an internal electrode material.
A reduction-resistant dielectric ceramic compact of the present invention
comprises an auxiliary sintering agent and a solid solution comprising a
barium titanate-based perovskite compound represented by the formula
ABO.sub.3 as a primary component.
In the reduction-resistant dielectric ceramic compact, the crystalline axis
ratio c/a obtained by x-ray diffraction in a temperature range of
-25.degree. C. or above satisfies 1.000.ltoreq.c/a.ltoreq.1.003, and the
maximum peak for temperature dependence of the dielectric constant
measured at an electric strength of 2 Vrms/mm or less and at an AC
frequency of 1 kHz is present at a temperature of below -25.degree. C.
The primary component described above is represented by the formula
ABO.sub.3 +aR+bM.
In this formula described above, R is a compound containing at least one
element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd,
Tb, Dy, Ho, Er, Tm, Yb and Lu, M is a compound containing at least one
element selected from the group consisting of Mn, Ni, Mg, Fe, Al, Cr and
Zn, and a and b indicate the number of moles of the compounds mentioned
above in the chemical formula each containing one element among the
elements mentioned above.
In addition, in the formula described above, preferably
1.000<A/B.ltoreq.1.035, 0.005.ltoreq.a.ltoreq.0.12, and
0.005.ltoreq.b.ltoreq.0.12.
In the reduction-resistant dielectric ceramic compact of the present
invention, about 0.2 to 4.0 parts by weight of the auxiliary sintering
agent is preferably present with respect to 100 parts by weight of the
primary component.
In addition, the primary component preferably comprises X(Zr,Hf)O.sub.3 in
the reduction-resistant dielectric ceramic compact of the present
invention, in which X is at least one element selected from the group
consisting of Ba, Sr and Ca. X(Zr,Hf)O.sub.3 can range of from zero to
about 0.20 mole with respect to 1 mole of ABO.sub.3 in the primary
component.
In the reduction-resistant dielectric ceramic compact of the present
invention, the primary component preferably comprises D which is a
compound containing at least one element selected from the group
consisting of V, Nb, Ta, Mo, W, Y, Sc, P, Al, and Fe. In the case
described above, D in the range of from zero to 0.02 mole is more
preferably contained with respect to 1 mole of ABO.sub.3 in the primary
component.
In the reduction-resistant dielectric ceramic compact of the present
invention, the primary component may comprise X(Zr,Hf)O.sub.3 and D. With
respect to 1 mole of ABO.sub.3 in the primary component, it is preferable
that X(Zr,Hf)O.sub.3 be in the range of from zero to about 0.20 mole and
the D be contained in the range of from zero to about 0.02 mole.
In the reduction-resistant dielectric ceramic compact of the present
invention, when the barium titanate-based perovskite compound represented
by ABO.sub.3 is represented by the chemical formula {(Ba.sub.1-x-y
Sr.sub.x Ca.sub.y)O}.sub.m TiO.sub.2, x, y and m preferably satisfy
0.ltoreq.x+y.ltoreq.0.20 and 1.000<m.ltoreq.1.035, and with respect to
100 parts by weight of the barium titanate-based perovskite compound, it
is preferable that compounds comprising at least one element selected from
the group consisting of S, Na and K be in the range of about 0.5 part by
weight or less calculated as SO.sub.3, Na.sub.2 O and K.sub.2 O,
respectively, and comprising Cl be in the range of about 5 parts by weight
or less.
In the reduction-resistant dielectric ceramic compact of the present
invention, the auxiliary sintering agent preferably comprises a compound
containing boron, a compound containing silicon and a compound containing
boron and silicon. In particular, the compound containing silicon is
preferably silicon oxide.
The present invention may be applied to a laminated ceramic capacitor
comprising a plurality of dielectric ceramic layers, internal electrodes
formed between the dielectric ceramic layers and external electrodes
electrically connected to the internal electrodes. In the laminated
ceramic capacitor described above, the dielectric ceramic layers comprise
the reduction-resistant dielectric ceramic compact according to the
present invention described above.
In the laminated ceramic capacitor of the present invention, the internal
electrodes may be formed of nickel, a nickel alloy, copper or a copper
alloy.
In addition, in the laminated ceramic capacitor of the present invention,
the external electrodes may each comprise a first layer composed of a
sintered layer containing a powdered conductive metal or of a sintered
layer containing a powdered conductive metal and one of a glass frit, a
crystallized glass and a ceramic; and a second layer which is disposed on
the first layer and which is a plating layer.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional view showing a laminated ceramic capacitor
according to an embodiment of the present invention; and
FIG. 2 is an exploded perspective view showing a ceramic laminate provided
for the laminated ceramic capacitor shown in FIG. 1.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
FIG. 1 is a cross-sectional view showing a laminated ceramic capacitor 1
according to an embodiment of the present invention, and FIG. 2 is an
exploded perspective view showing a ceramic laminate 3 provided for the
laminated ceramic capacitor 1 shown in FIG. 1.
The laminated ceramic capacitor 1 comprises the ceramic laminate 3 in the
form of a rectangular parallelepiped obtained by laminating a plurality of
dielectric ceramic layers 2a and 2b with internal electrodes 4 provided
therebetween. On the two end surfaces of the ceramic laminate 3, external
electrodes 5 are formed so as to be connected to predetermined internal
electrodes 4, and on each external electrode 5, a first plating layer 6
composed of nickel, copper or the like is formed, and in addition, on each
first plating layer 6, a second plating layer 7 composed of solder, tin or
the like is formed.
Next, a method for manufacturing this laminated ceramic capacitor 1 will be
described in the order of manufacturing steps.
First, a powdered barium titanate-based starting material, which is used as
a primary component of the dielectric ceramic layers 2a and 2b, is
prepared by weighing and mixing materials so as to have a predetermined
composition. The composition of the powdered starting material will be
described later.
Next, an organic binder is added to the powdered starting material thus
formed so as to form a slurry and the slurry is molded to form sheets,
thereby yielding ceramic green sheets for forming the dielectric ceramic
layers 2a and 2b.
Subsequently, on one major surface of each ceramic green sheet used for the
dielectric ceramic layer 2b, an internal electrode 4 is formed which
contains a base metal, such as nickel, a nickel alloy, copper or a copper
alloy, as a conductive component. These internal electrodes 4 may be
formed by a printing method such as a screen printing method or may be
formed by a deposition method or a plating method.
Next, the required number of ceramic green sheets for forming dielectric
ceramic layers 2b provided with the internal electrodes 4 formed thereon
are laminated to each other, and as shown in FIG. 2, these green sheets
are provided between ceramic green sheets for forming dielectric ceramic
layers 2a provided with no internal electrodes formed thereon and are
bonded by compression, thereby yielding a green laminate.
Subsequently, the green laminate is fired at a predetermined temperature in
a predetermined atmosphere, thereby yielding the ceramic laminate 3.
Next, on the two end surfaces of the ceramic laminate 3, the external
electrodes 5 are formed so as to be electrically connected to
predetermined internal electrodes 4. As a material for this external
electrode 5, the same material as that for the internal electrode 4 may be
used. In addition, silver, palladium, a silver-palladium alloy, copper, a
copper alloy or the like may also be used, and in addition, a material may
be used which is obtained by adding a glass frit, such as a B.sub.2
O.sub.3 -SiO.sub.2 -BaO-based glass or a Li.sub.2 O-SiO.sub.2 -BaO-based
glass, a crystallized glass or a ceramic to the powdered metal mentioned
above. In view of application of the laminated ceramic capacitor 1, the
place at which the capacitor is used and like considerations, an
appropriate material may be selected. In addition, the external electrode
5 is typically formed by steps of coating the ceramic laminate 3 obtained
by firing with a paste containing a powdered metal and baking; however,
the paste may be applied to the laminate before firing and may then be
simultaneously fired with the ceramic laminate 3.
Subsequently, on the external electrodes 5, plating is performed using
nickel, copper or the like so as to form the first plating layers 6.
Finally, on these first plating layers 6, the second plating layers 7
composed of solder or tin are formed, whereby the laminated ceramic
capacitor 1 is completed. In this connection, conductive layers further
formed on the external electrodes 5 by plating or the like may be omitted
depending on application of the laminated ceramic capacitor.
By firing the powdered barium titanate-based starting material for forming
the dielectric ceramic layers 2a and 2b described above, the
reduction-resistant dielectric ceramic compact, which comprises the
auxiliary sintering agent and the solid solution comprising barium
titanate as the primary component, is obtained as described above.
In this reduction-resistant dielectric ceramic compact, the crystalline
axis ratio c/a obtained by x-ray diffraction in a temperature range of
-25.degree. C. or above satisfies 1.000.ltoreq.c/a.ltoreq.1.003, and in
temperature dependence of a relative dielectric constant measured at an
electric strength of 2 Vrms/mm or less and at an AC frequency of 1 kHz,
the maximum peak is present at -25.degree. C. or below.
In addition, the primary component is represented by the formula ABO.sub.3
+aR+bM.
In this formula, ABO.sub.3 is a barium titanate-based perovskite compound
having an A-site element and a B-site element. R is a compound containing
at least one element selected from the group consisting of La, Ce, Pr, Nd,
Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. M is a compound containing at
least one element selected from the group consisting of Mn, Ni, Mg, Fe,
Al, Cr and Zn. In addition, a and b each indicates the number of moles of
the compound described above in the formula.
In addition, 1.000<A/B.ltoreq.1.035, 0.005.ltoreq.a.ltoreq.0.12, and
0.005.ltoreq.b.ltoreq.0.12.
By using the reduction-resistant dielectric ceramic compact described above
for forming the dielectric ceramic layers 2a and 2b, in the laminated
ceramic capacitor 1 thus obtained, the loss and the heat generation under
high frequency conditions of high voltage or large current can be
decreased, and in addition, the insulating resistance can be stabilized
under AC or DC high temperature loading conditions. Furthermore, a base
metal such as nickel or a nickel alloy can be satisfactory used as the
material for the internal electrode 4.
The content of the auxiliary sintering agent contained in this
reduction-resistant dielectric ceramic compact is preferably in the range
of about 0.2 to 4.0 parts by weight with respect to 100 parts by weight of
the primary component, and more preferably, in the range of about 0.5 to 2
parts by weight. When the content is less than about 0.2 part by weight,
insufficient sintering may occur in the fired reduction-resistant
dielectric ceramic compact in some cases, and on the other hand, when the
content is more than about 4.0 parts by weight, the average life time of
the laminated ceramic capacitor 1 in a high temperature loading test may
be decreased in some cases.
As the auxiliary sintering agent, for example, a compound containing boron,
a compound containing silicon or a compound containing boron and silicon
is used. In particular, as the compound containing silicon, silicon oxide
is advantageously used.
In addition, when the primary component comprises X(Zr, Hf)O.sub.3 (in
which X is at least one element selected from the group consisting of Ba,
Sr and Ca) and/or D (in which D is a compound containing at least one
element selected from the group consisting of V, Nb, Ta, Mo, W, Y, Sc, P,
Al and Fe), the features described above can be further improved. In this
case, it is preferable that X(Zr, Hf)O.sub.3 be in the range of from zero
to about 0.20 mole and that D be in the range of from zero to about 0.02
mole with respect to 1 mole of ABO.sub.3 in the primary component.
The ratio of Zr to Hf in the X(Zr, Hf) described above is not specifically
limited; however, in order to obtain superior sintering characteristics,
the ratio of Hf is preferably about 30 mole percent or less.
In the barium carbonate and titanium oxide which are used for forming this
reduction-resistant dielectric ceramic compact, S, Na, K, Cl and the like
are contained as impurities. When the barium titanate-based perovskite
compound represented by ABO.sub.3 is represented by the chemical formula
{(Ba.sub.1-x-y Sr.sub.x Ca.sub.y)O}.sub.m TiO.sub.2, it is preferable that
x, y, and m satisfy 0.ltoreq.x+y.ltoreq.0.2 and 1.000<m.ltoreq.1.035.
In addition, with respect to 100 parts by weight of this barium
titanate-based perovskite compound, it is preferably that compounds
containing at least one element selected from the group consisting of S,
Na and K contain about 0.5 part by weight or less thereof as SO.sub.3,
Na.sub.2 O, and K.sub.2 O, respectively, and that about 5 parts by weight
or less of Cl is present. When S, Na, K and Cl are contained in greater
amounts in the parts by weight mentioned above, the sintering may vary,
resulting in variation in capacitance of the laminated ceramic capacitor
1.
By using the reduction-resistant dielectric ceramic compact described above
for forming the dielectric ceramic layers 2a and 2b in the obtained
laminated ceramic capacitor 1, the loss and the heat generation can be
decreased under high frequency conditions of high voltage or large
current, and in addition, the insulating resistance can be stabilized
under AC or DC high temperature loading conditions. Furthermore, a base
metal such as nickel or a nickel alloy can be satisfactory used as the
internal electrode material 4.
Next, the reduction-resistant dielectric ceramic compact and the laminated
ceramic capacitor according to the present invention will be described in
more detail with reference to examples.
EXAMPLE 1
In this example, reduction-resistant dielectric ceramic compacts having a
composition represented by the formula {(Ba.sub.1-x-y Sr.sub.x
Ca.sub.y)O}.sub.m TiO.sub.2 +aR+bM are to be obtained.
First, as starting materials, powdered BaCO.sub.3, CaCO.sub.3, SrCO.sub.3
and TiO.sub.2 were prepared each having a purity of 98%.
Next, the powdered starting materials described above were weighed so that
{(Ba.sub.1-x-y Sr.sub.x Ca.sub.y)O}.sub.m TiO.sub.2, a type of barium
titanate-based solid solution represented by ABO.sub.3 showing a
perovskite structure, had a composition in which the molar ratios of x, y,
and m were in accordance with those shown in Table 1. Subsequently, the
starting materials thus weighed were wet-mixed by using a ball mill, and
after pulverizing and drying were performed, calcining was performed at
1,120.degree. C. for 2 hours in the air, whereby a barium titanate-based
solid solution was obtained.
As a starting material for R (in which R was a compound containing at least
one element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu,
Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), powdered La.sub.2 O.sub.3, CeO.sub.2,
Pr.sub.6 O.sub.11, Nd.sub.2 O.sub.3, Sm.sub.2 O.sub.3, EU.sub.2 O.sub.3,
Gd.sub.2 O.sub.3, Tb.sub.4 O.sub.7, Dy.sub.2 O.sub.3, Ho.sub.2 O.sub.3,
Er.sub.2 O.sub.3, Tm.sub.2 O.sub.3, Yb.sub.2 O.sub.3 and Lu.sub.2 O.sub.3
were prepared each having a purity of 99% or more.
As a starting material for M (in which M is a compound containing at least
one element selected from the group consisting of Mn, Ni, Mg, Fe, Al, Cr
and Zn), powdered MnO, NiO, MgO, Fe.sub.2 O.sub.3, Al.sub.2 O.sub.3,
Cr.sub.2 O.sub.3 and ZnO were prepared each having a purity of 99% or
more.
As an auxiliary sintering agent, four types described below were prepared.
Oxides, carbonate salts and hydroxides for individual components were
weighted, mixed and pulverized so that, first, a 0.55B.sub.2 O.sub.3
-0.25Al.sub.2 O.sub.3 -0.03MnO-0.17BaO (hereinafter referred to as an
auxiliary sintering agent 1) was obtained as an example of a compound
containing boron; secondly, 0.25Li.sub.2
O-0.65(0.3TiO.sub.2.0.7SiO.sub.2)-Al.sub.2 O.sub.3 (hereinafter referred
to as an auxiliary sintering agent 2) was obtained as an example of a
compound containing silicon; and thirdly, 0.25Li.sub.2 O-0.30B.sub.2
O.sub.3 -0.03TiO.sub.2 -0.42SiO.sub.2 (hereinafter referred to as an
auxiliary sintering agent 3) was obtained as an example of a compound
containing silicon and boron; whereby powdered materials were obtained.
After the powdered materials thus obtained were each heated to
1,500.degree. C. in a platinum crucible, by quenching and pulverizing,
individual powdered oxides having an average particle diameter of 1 .mu.m
or less were obtained. In addition, fourthly, as another example of a
compound containing silicon, a colloidal silica solution (hereinafter
referred to as an auxiliary sintering agent 4) containing 30 wt % of
silicon oxide as SiO.sub.2 was obtained.
Next, the barium titanate-based solid solutions thus prepared and the
starting materials for the other components were weighed so as to obtain
the compositions shown in Table 1.
In Table 1, the factor a for R and the factor b for M indicates the number
of moles of each in the chemical formula. Furthermore, the content of the
auxiliary sintering agent is represented by the parts by weight with
respect to 100 parts by weight of the primary component {(Ba.sub.1-x-y
Sr.sub.x Ca.sub.y)O}.sub.m TiO.sub.2 +aR+bM.
TABLE 1
Auxiliary Sintering
Agent
Sample a(Molar Ratio) Total
b(Molar Ratio) Total (Parts by Weight)
No. x y x + y R(Oxide of Element) of a M(Oxide
of Element) of b m 1 2 3 4
1 0 0 0 Eu 0.05 Yb 0.05 0.1 Mg
0.05 Mn 0.05 0.1 1.000 0 2 0 0
2 0.05 0.05 0.1 Gd 0.08 0.08 Mn
0.1 0.1 1.055 4 0 0 0
3 0 0.05 0.05 Nd 0.003 0.003 Ni
0.005 0.005 1.010 0 0 0 2
4 0.1 0.08 0.18 Gd 0.1 Ho 0.05 0.15 Mg
0.05 Ni 0.05 0.1 1.015 0 0 0 3
5 0.04 0.08 0.12 Tb 0.01 0.01 Fe
0.001 Mn 0.002 0.003 1.010 1 0 0 0
6 0 0.08 0.08 Eu 0.05 Ce 0.05 0.1 Al
0.10 Mg 0.04 0.14 1.005 0 0.5 0 0
7 0 0 0 Tb 0.09 0.09 Mg
0.05 Mn 0.05 0.1 1.030 0.15 0 0 0
8 0.01 0.04 0.05 Dy 0.03 Pr 0.03 0.06 Cr
0.04 Mg 0.04 0.08 1.020 0 5 0 0
9 0.02 0.23 0.25 Gd 0.04 0.04 Fe
0.005 Mg 0.045 0.05 1.010 0 0 1 0
10 0 0 0 Sm 0.08 Tm 0.01 La 0.02 0.11 Mn
0.05 Mg 0.05 0.1 1.035 0 0 0 4
11 0.01 0.04 0.05 Gd 0.004 Tb 0.001 0.005 Mg
0.01 0.01 1.010 0 2 0 0
12 0.05 0.05 0.1 Gd 0.1 Dy 0.02 0.12 Mg
0.04 Ni 0.03 Al 0.03 0.1 1.015 0 0 2 0
13 0.04 0.05 0.09 Tb 0.04 Nd 0.02 0.06 Mn
0.005 0.005 1.010 1 0 0 0
14 0.12 0 0.12 Er 0.03 Yb 0.03 Lu 0.02 0.08 Al
0.02 Mg 0.05 Ni 0.05 0.12 1.015 0 0 0 2
15 0.1 0.04 0.14 Sm 0.06 Lu 0.02 0.08 Cr
0.02 Mn 0.03 0.05 1.020 0 0 0.2 0
16 0 0 0 Tb 0.05 Ce 0.01 0.06 Mg
0.07 0.07 1.010 0 0 4 0
17 0.1 0.1 0.2 Gd 0.07 Ho 0.02 0.09 Mn
0.1 0.1 1.015 3 0 0 0
18 0.03 0.1 0.13 Dy 0.1 0.1 Zn 0.05
Mg 0.05 0.1 1.010 0 2 0 0
Next, a polyvinyl butyral-based binder and an organic solvent such as
ethanol were added to each of the mixtures prepared for forming the
samples described above and each mixture was then wet-mixed by using a
ball mill, thereby forming a slurry. The ceramic slurry was then
sheet-molded by the doctor blade method, thereby obtaining rectangular
ceramic green sheets 25 .mu.m thick.
Next, a conductive paste primarily composed of nickel was printed on
predetermined ceramic green sheets, whereby conductive paste layers for
forming internal electrodes were formed.
Subsequently, the ceramic green sheets provided with the conductive paste
layers formed thereon were laminated to each other so that the sides, at
which the conductive paste layers extend, of ceramic green sheets adjacent
to each other were opposite to each other, and ceramic green sheets having
no conductive paste layers formed thereon were placed on the top and the
bottom of the laminate thus formed and were then bonded together by
compression, whereby a green laminate was obtained.
Next, the green ceramic laminate was heated to 350.degree. C. in a nitrogen
atmosphere so as to remove the binder and was then fired at a temperature
shown in Table 2 for 2 hours in a reducing atmosphere composed of a
H.sub.2 -N.sub.2 -H.sub.2 O gas at an oxygen partial pressure of 10.sup.-9
to 10.sup.-12 MPa, whereby a sintered ceramic laminate was obtained.
Subsequently, both end surfaces of the sintered ceramic laminate were
coated with a conductive paste composed of a B.sub.2 O.sub.3 -Li.sub.2
O-SiO.sub.2 -BaO-based glass frit and powdered copper and was then fired
at 750.degree. C. in a nitrogen atmosphere, whereby external electrodes
electrically connected to the internal electrodes were formed.
Next, a nickel plating solution composed of nickel sulfate, nickel chloride
and boric acid was prepared, and nickel plating was performed on the
external electrodes by the barrel plating method. Finally, a solder
plating solution composed of an alkanol-sulfonic acid bath (AS bath) was
prepared, and solder plating was performed on the nickel plating film
described above, whereby a predetermined laminated ceramic capacitor was
obtained.
The dimensions of the laminated ceramic capacitor thus obtained were such
that the width was 3.2 mm, the length was 4.5 mm a | | |