A novel passivation structure and its method of fabrication. According to the present invention a first dielectric layer is formed upon a conductive layer formed over a substrate. The first dielectric layer and the conductive layer are then patterned into a first dielectric capped interconnect and a dielectric capped bond pad. Next, a second dielectric layer is formed over and between the dielectric capped interconnect and the dielectric capped bond pad. The top portion of the second dielectric layer is removed so as to expose the dielectric capped bond pad and the dielectric capped interconnect. A third dielectric layer is then formed over the exposed dielectric capped bond pad and the exposed dielectric capped interconnect and over the second dielectric.
A structure and a method for forming the same. The method includes (a) providing a structure which includes (i) a dielectric layer, (ii) an electrically conducting bond pad on and in direct physical contact with the dielectric layer top surface, (iii) a first passivation layer on the dielectric layer top surface and on the electrically conducting bond pad, wherein the first passivation layer comprises a first hole directly above the electrically conducting bond pad, and (iv) an electrically conducting solder bump filling the first hole and electrically coupled to the electrically conducting bond pad; and (b) forming a second passivation layer on the first passivation layer, wherein second passivation layer is in direct physical contact with the electrically conducting solder bump, and wherein the electrically conducting solder bump is exposed to a surrounding ambient immediately after said forming the second passivation layer is performed.
