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High temperature circuit structures with expansion matched SiC, AlN and/or AlxGa1-xN(x>0.69) circuit device
   
Document Number
US Patent 6576972
Issued Date
June 10, 2003
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Abstract
A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or Al.sub.x Ga.sub.1-x N(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W.sub.2 C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W.sub.2 C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.
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High temperature circuit structures with expansion matched SiC, AlN and/or AlxGa1-xN(x>0.69) circuit device - US Patent 6576972 Drawing
Drawing from US Patent 6576972
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Number of Claims:
31
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Owner
Heetronix (Reno, NV)
Published
June 10, 2003
Application Number
09/645,383
Filed
August 24, 2000
US Classification
257/470   257/537 257/703 257/783
Int'l Classification
H01C   7/02   (20060101)   G01K   7/16   (20060101)  
Examiner
USPTO Field of Search
257/77   257/467   257/468   257/470   257/536   257/537   257/615   257/767   257/778   257/782   257/783   257/703  
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