A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or Al.sub.x Ga.sub.1-x N(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W.sub.2 C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W.sub.2 C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.
A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or Al.sub.xGa.sub.1-xN(x>- ;0.69) connected via electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer, which can be a thin film of W, WC or W.sub.2C less than 10 micrometers thick, have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W.sub.2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. Applications include temperature sensors, pressure sensors, chemical sensors and high temperature and high power electronic circuits. Without the mounting layer, a thin film piezoelectric layer of SiC, AlN and/or Al.sub.xGa.sub.1-xN(x>0.69), less than 10 micrometers thick, can be secured to the die.
Environmental sensors and other bodies, together with associated lead wires, are mounted to a oxidizable substrate for high temperature applications by means of a reacted borosilicate mixture (RBM) that secures the body relative to the substrate via of an oxide interface formed between the RBM and substrate during a high temperature reaction process. An oxide interface is also formed with oxidizable bodies to provide further mounting strength. The RBM is a B.sub.2O.sub.3--SiO.sub.2 mixture, with the B.sub.2O.sub.3 portion a function of the reaction temperature and desired bonding strength and viscosity.
An improved liquid level sensor is disclosed which provides a reliable and simple device for accurately determining the level of a liquid within a vessel. The sensor utilizes a plurality of thermocouple junctions grouped in pairs with the pairs being spaced along a line extending generally in the direction in which the liquid level may vary. A first thermocouple junction of each pair is located in relatively close thermal proximity to an electrically powered heater and the second of each pair of thermocouple junctions is spaced away from the heater. The thermocouple junctions are connected in series and produce a signal indicative of the level of liquid along the sensor. Alternatively, a single threshold liquid level sensor is provided for use with a hermetic interface to provide a signal to indicate a level of liquid within a container. Additionally, a pressure sensing circuit may also be incorporated with either liquid level sensor.
Environmental sensors and other bodies, together with associated lead wires, are mounted to a oxidizable substrate for high temperature applications by means of a reacted borosilicate mixture (RBM) that secures the body relative to the substrate via of an oxide interface formed between the RBM and substrate during a high temperature reaction process. An oxide interface is also formed with oxidizable bodies to provide further mounting strength. The RBM is a B.sub.2O.sub.3--SiO.sub.2 mixture, with the B.sub.2O.sub.3 portion a function of the reaction temperature and desired bonding strength and viscosity.
In a lithographic projection apparatus, a liquid supply system maintains liquid in a space between a projection system of the lithographic projection apparatus and a substrate. A sensor positioned on a substrate table, which holds the substrate, is configured to be exposed to radiation when immersed in liquid (e.g., under the same conditions as the substrate will be exposed to radiation). By having a surface of an absorption element of the sensor, that is to be in contact with liquid, formed of no more than one metal type, long life of the sensor may be obtained.