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Test circuit for memory
   
Document Number
US Patent 6611929
Issued Date
August 26, 2003
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Abstract
A test circuit for memory having plural memory cells and address latches responsive to addressing circuitry for reading/writing to said memory cells in a normal mode, has first connecting circuitry for connecting the address latches to form a linear feedback shift register. The linear feedback shift register is responsive to a clock signal to provide a sequence of addresses for testing the memory in a test mode.
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Test circuit for memory - US Patent 6611929 Drawing
Drawing from US Patent 6611929
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Number of Claims:
9
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Owner
STMicroelectronics Limited (Almondsbury Bristol,GB)
Published
August 26, 2003
Application Number
09/488,173
Filed
January 20, 2000
US Classification
714/718  
Int'l Classification
G11C   29/20   (20060101)   G11C   29/04   (20060101)  
Examiner
Assistant Examiner
Priority Data
Jan 22, 1999 [GB] 9901494
USPTO Field of Search
714/718  
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