The invention provides a magnetic memory device wherein an imbalance between variation threshold values for different magnetization directions of storage elements thereof such as a displacement of the center of an asteroid curve from the origin can be corrected readily without modifying the storage elements themselves. The magnetic memory device includes a plurality of storage elements of the magnetoresistive type capable of storing information making use of a variation of the magnetization direction thereof, and a magnetic field application element for applying a bias magnetic field to the storage elements.
A magnetic memory cell that uses a curved magnetic region to create magnetic anisotropy is provided by the present invention. The magnetic memory cell is created from a free magnetic layer, a barrier layer and a reference magnetic layer. The magnetic layers are constructed such that they have portions that are curved with respect to a first axis and straight with respect to a second perpendicular axis. These curved portions result in a magnetic memory cell that has an easy axis that is parallel to the first axis and a hard axis that is perpendicular to the easy axis. In addition, the resulting magnetic memory cell's coercivity is independent of it's thickness. Thus, the magnetic memory cell is well adapted to being scaled down without increasing the likelihood of thermally induced errors.
A magnetic memory device comprises a plurality of magneto-resistance effect elements arranged in a matrix form. The each of a plurality of magneto-resistance effect elements have a pattern shape which substantially internally touches an ellipse having major and minor axes of the magneto-resistance effect element as major and minor axes thereof and a pitch between the adjacent magneto-resistance effect elements in a direction of the major axis is longer than that in a direction of the minor axis.
A method, information processing system and computer readable medium for transferring data between applications on a computer is disclosed. The method includes selecting data from a first application and selecting a copy-to command for copying the data selected from the first application. The method further includes selecting a second application as a destination for the data selected. The method further includes selecting a location in the second application for inserting the data selected.
A magnetic memory device comprises a plurality of magneto-resistance effect elements arranged in a matrix form. The each of a plurality of magneto-resistance effect elements have a pattern shape which substantially internally touches an ellipse having major and minor axes of the magneto-resistance effect element as major and minor axes thereof and a pitch between the adjacent magneto-resistance effect elements in a direction of the major axis is longer than that in a direction of the minor axis.
A magnetic memory device includes magnetoresistance-effect storage elements arranged so as to store information by using a change in a magnetization direction of a storage area of each of the storage elements, and a control unit. The control unit controls a polarity of a first wiring current for generating a recording auxiliary magnetic field in a direction of a hard magnetization axis of the storage area, and a polarity of a second wiring current for generating a recording magnetic field in a direction of an easy magnetization axis of the storage area. Each of the first and second wiring currents has a first polarity when generating a "1" and a second polarity, different from the first polarity, when generating a "0".
