A method and system in integrated circuit metrology for adapting a metrology system to work with diverse metrology devices. One embodiment is a method and system for generating signal adjustment data to adapt measured diffraction signals to enable use of a library of diffraction signals and structure profiles created for a different metrology device. Another embodiment is the creation and use of a data store of diffraction adjustment vectors and metrology device specifications relative to a reference device specification.

The present invention provides a method and a system for a real-time configurable definition and generation of grating profile libraries. A parameter set is used to specify the ranges of grating dimensions and resolutions of the profile library to be generated. In one embodiment, a compiler creates subsets of a large profile library, the subset designed to enable rapid search and validation of real-time data. In another embodiment, an automatic process generates a new parameter set and a new subset of the library when trigger conditions are met. Subsets of the profile library may be used to check if grating spectrum data are within the ranges established for an application and if the dimensions are within the process averages established for a manufacturing run. The system for generation of grating profile libraries is scalable, operable in a distributed environment, and includes application specific items that can be selected or determined by the client.

To determine the profile of an integrated circuit structure, a signal is measured off the structure with a metrology device. The measured signal is compared to signals in a virtual profile library. The comparison is stopped if matching criteria are met. A subset of a virtual profile data space is determined when the matching criteria are not met. The subset is determined using profile data space associated with the library. A virtual profile signal of the subset is selected. Virtual profile shape/parameters are determined based on the virtual profile signal. A difference is calculated between the measured and virtual profile signals. The difference is compared to virtual profile library creation criteria. If the criteria are met, then the structure is identified using virtual profile data, which includes the virtual profile shape/parameters, associated with the virtual profile signal. Or, if the criteria are not met, then a corrective action is applied.

To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.

To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.