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Document Number
US Patent 6653567
Issued Date
November 25, 2003
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Abstract
The invention relates to an indicating instrument, in particular for a motor vehicle, having a housing with a front frame holding a cover pane, and an elastic spacing element arranged between the cover pane and front frame, and to a method for connecting the cover pane to the front frame. In order to ensure a reliable connection between the cover pane and front frame which is without play, the invention proposes the spacing element be placed in an axial cutout which is arranged in the region of the circumference of the front frame and faces the cover pane, and in which the cover pane can engage. The method consists in that in a first step the spacing element is inserted into the axial cutout in the front frame, and in a second step the cover pane is pressed into the axial cutout against the spacing element.
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Number of Claims:
15
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Owner
Mannesmann VDO AG (Frankfurt,DE)
Published
November 25, 2003
Application Number
10/236,897
Filed
September 5, 2002
US Classification
174/66   174/50 220/241
Int'l Classification
B60K   37/02   (20060101)  
Assistant Examiner
Attorney/Law Firm
Parent Case
RELATED APPLICATION This application is a continuation application of our co-pending application Ser. No. 09/470,190 filed Dec. 22, 1999, the entire contents and disclosure of which are considered as being part of the disclosure of this continuation application and are hereby incorporated by reference herein in their entirety.
Priority Data
Dec 23, 1998 [DE] 198 59 919
USPTO Field of Search
174/66   174/67   174/17CT   174/65R   174/255   174/52.1   174/17R   174/50   361/752   361/761   361/792   361/647   361/800   361/807   361/23   220/241   220/3.8   220/3.2   200/302.2   200/302.1  
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6812493 - Thin-film semiconductor element and method of producing same - Owned by Matsushita Electric Industrial Co., Ltd. (JP)

The present invention provides a thin film semiconductor element which is small in area with high on-current enough to be suitable for the power saving, miniaturization, and high definition display of a device. According to the present invention, an outer shape of a semiconductor thin film is processed and regions (a channel region, a source region, and a drain region) in the semiconductor thin film are formed by using, as masks, other element components such as a gate electrode. Specifically, ion-implanted regions are formed by implanting impurity ions into predetermined regions of the semiconductor thin film using, as a mask, the gate electrode overlapped on the thin film via an insulation film. Thereafter, the semiconductor is processed into a predetermined shape by etching using, as masks, previously formed element components such as the gate electrode.

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Description
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