A substrate includes a memory and a testing device for testing the memory. The testing device includes an interpreter element that operates and tests the memory in accordance with a test program. The test program command codes are stored in the untested memory cell array of the memory that will be tested. The advantage of the testing device consists, inter alia, in the fact that the testing device no longer needs to be adapted to changed hardware properties of the chip generation or fabrication lines because the test program, which is suitable for the respective chip type, is stored as a variable code on the respective memory which is to be tested. It is thus also possible to test various memory chip types with the same testing device.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of copending International Application No. PCT/DE00/02100, filed Jun. 28, 2000, which designated the United States.
To be able to test a plurality of identical semiconductor circuit devices in a particularly rapid yet reliable manner, a test method includes carrying out the tests in parallel and substantially simultaneously on the plurality of semiconductor circuit devices and driver lines--used in the process--of a test device to the semiconductor circuit devices simultaneously and jointly for all the semiconductor circuit devices. In such a case, test results are read from a plurality of input/output channels in compressed form. Furthermore, as an alternative or in addition thereto, the semiconductor circuit devices to be tested are disposed and connected up in at least one stack.
Memory array repair where the repair logic cannot operate at the same operating condition as the memory array is presented. In one embodiment, a test is run with the memory array configured in a first operating condition that repair logic for the memory array cannot achieve, and test data is accumulated from the test in the memory array. The memory array is then read with the memory array configured in a second operating condition that the repair logic can achieve using the test data from the test at the first operating condition. As a result, repairs can be achieved even though the repair logic is incapable of operating at the same condition as the memory array. A method, test unit and integrated circuit implementing the testing are presented.
Memory array repair where the repair logic cannot operate at the same operating condition as the memory array is presented. In one embodiment, a test is run with the memory array configured in a first operating condition that repair logic for the memory array cannot achieve, and test data is accumulated from the test in the memory array. The memory array is then read with the memory array configured in a second operating condition that the repair logic can achieve using the test data from the test at the first operating condition. As a result, repairs can be achieved even though the repair logic is incapable of operating at the same condition as the memory array. A method, test unit and integrated circuit implementing the testing are presented.
