An electro-optical device comprises first and second substrates (10, 20) disposed facing each other, an interconnect (14) formed on the surface of the first substrate (10) opposing the second substrate (20), and a conductive member (40) passing through the second substrate (20) and reaching both surfaces of the second substrate (20), and the conductive member (40) and interconnect (14) are electrically connected between the first and second substrates (10, 20).
An image display apparatus has a hermetic container having therein first and second substrates arranged opposite each other. An image display unit is disposed within the hermetic container and a conductive bonding member that seals the first substrate and the second substrate is disposed between the first and second substrates. The electric potential of the conductive bonding member is specified.
A liquid-crystal display device has a pair of substrates (1, 2) which are opposite to each other and a semiconductor element which is directly joined to the substrate (2). A portion other than an active surface (12a) of the surfaces of the semiconductor element (12) is covered with a light-shielding member portion (16). Since the light-shielding member (16) completely shields light irradiated from the upper and side surfaces of the semiconductor element (12) and a joint surface between the semiconductor element (12) and the substrate (1), the semiconductor element (12) can be prevented from being erroneously operated.
A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer, forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole, eliminating any remaining patterning material used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole is etched to form a via hole having a smooth surface and extending through the glass wafer, and eliminating the material layer. The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.