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Method for making a diode device
   
Document Number
US Patent 6774003
Issued Date
August 10, 2004
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Abstract
A method for manufacturing a pair of electrodes comprises fabricating a first electrode with a substantially flat surface and placing a sacrificial layer over a surface of the first electrode, wherein the sacrificial layer comprises a first material. A second material is placed over the sacrificial layer, wherein the second material comprises a material that is suitable for use as a second electrode. The sacrificial layer is removed with an etchant, wherein the etchant chemically reacts with the first material, and further wherein a region between the first electrode and the second electrode comprises a gap that is a distance of 50 nanometers or less, preferably 5 nanometers or less. Alternatively, the sacrificial layer is removed by cooling the sandwich with liquid nitrogen, or alternatively still, the sacrificial layer is removed by heating the sacrificial layer, thereby evaporating the sacrificial layer.
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Number of Claims:
7
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Published
August 10, 2004
Application Number
10/192,282
Filed
July 9, 2002
US Classification
438/380   257/E45.001 438/141 438/328
Int'l Classification
H01L   45/00   (20060101)   H01L   37/00   (20060101)  
Examiner
Parent Case
This is a continuation in part of application Ser. No. 09/792,905, filed Feb. 23, 2001, now U.S. Pat. No. 6,417,060.
USPTO Field of Search
438/380   438/133   438/141   438/328  
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