A preferred embodiment of the present invention provides a Schottky diode formed from a conductive anode contact, a semiconductor junction layer supporting the conductive contact and a base layer ring formed around at least a portion of the conductive anode contact. In particular, the base layer ring has material removed to form layer material gap (e.g., a vacuum gap) adjacent to the conductive anode contact. A dielectric layer is also provided to form one boundary of the base layer material gap.
RELATED APPLICATIONS
This file is a continuation of application Ser. No. 09/658,222 filed on Sep. 8, 2000 now U.S. Pat. No. 6,653,707.
MICROFICHE/COPYRIGHT REFERENCE
[Not Applicable]
