A patterned SOI/SON composite structure and methods of forming the same are provided. In the SOI/SON composite structure, the patterned SOI/SON structures are sandwiched between a Si over-layer and a semiconductor substrate. The method of forming the patterned SOI/SON composite structure includes shared processing steps wherein the SOI and SON structure are formed together. The present invention also provides a method of forming a composite structure which includes buried conductive/SON structures as well as a method of forming a composite structure including only buried void planes.
Semiconductor-on-insulator (SOI) structures, semiconductor devices using the same and methods of manufacturing the same, and more particularly, to a structure with a single-crystalline (for example, germanium (x-Ge)) layer on an insulating layer, semiconductor devices using the same, and methods of manufacturing the same. The SOI structure may include a single-crystalline substrate formed of a first semiconductor material, a first insulating layer formed on the substrate and having at least one window exposing a portion of the substrate, a first epitaxial growth region formed on a surface of the substrate exposed by the window and formed of at least one of the first semiconductor material and a second semiconductor material, and a first single-crystalline layer formed on the first insulating layer and the first epitaxial growth region and formed of the second semiconductor material, and crystallized using a surface of the first epitaxial growth region as a seed layer for crystallization.
The present invention provides a semiconductor structure that includes a substrate having a crystal lattice; a first structure formed in a first region of the substrate, the first structure includes at least a heterostructure that generates a lattice stress in said crystal lattice in the first region; and a second structure surrounding the first structure for preventing lattice stress from propagating outward from the first region of the substrate. The present invention also provides various methods for forming the semiconductor structure as well as other like structures.
A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a Si-containing substrate, activating the dopant using an activation anneal step and then anodizing the implanted and activated dopant region in a HF-containing solution. The graded porous Si has a relatively coarse top layer and a fine porous layer that is buried beneath the top layer. Upon a subsequent oxidation step, the fine buried porous layer is converted into a buried oxide, while the coarse top layer coalesces into a solid Si-containing over-layer by surface migration of Si atoms.
