A method or process for producing PZT films by using a Ti material having a broad allowable temperature range for providing a predetermined film composition, easily thermally deposited from Ti(OiPr).sub.2 (dibm).sub.2 at a low substrate temperature of 450.degree. C. or less in CVD. Starting materials are fed in a solution vaporization system. The starting materials, Ti (OiPr).sub.2 (dibm).sub.2, used as a T1 source, and a combination of Pb(dpm).sub.2 -Zr(Oipr)(dpm).sub.3 -Ti(OiPr).sub.2 (dibm).sub.2 in n-butyl acetate are vaporized and supplied at 200.degree. C. The vaporized starting materials are fed into a chamber and subjected to CVD at a substrate temperature of 420.degree. C. at 1 Torr in an oxygen atmosphere, whereby excellent PZT films can be produced. Ti(OiPr).sub.2 (dibm).sub.2 has a melting point of 105.degree. C., a high solubility and a vapor pressure of 1 Torr/150.degree. C. and does not react with Pb(dpm).sub.2, and a solution thereof in n-butyl acetate has a pot life of 3 months.
