A semiconductor device includes first and second semiconductor layers and first and second MOS transistors. The first semiconductor layer is provided on and electrically connected to the semiconductor substrate. The second semiconductor layer is provided near the first semiconductor layer and formed above the semiconductor substrate via one of an insulating film and a cavity. The first and second MOS transistors are respectively provided on the first and second semiconductor layers, and each has a gate electrode arranged parallel to a boundary between the first and second semiconductor layers.
An integrated circuit device includes a gate electrode formed on an active region of an integrated circuit device and on a field isolation layer adjacent to the active region. A source region and a drain region are in the active region on alternate sides of the gate electrode. At least one buried insulation layer is beneath the drain region or the source region.
A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.
A semiconductor device includes a substrate having first and second regions, a first insulating film formed on the substrate in the first region, a first epitaxial layer formed on the substrate in the second region and having an upper surface higher than an upper surface of the first insulating film, and a first semiconductor layer formed on the first insulating film with a space provided with respect to the first epitaxial layer, having an upper surface set at substantially the same height as the upper surface of the first epitaxial layer and having a tapered surface faced to a side surface of the first epitaxial layer.
A semiconductor device manufacturing method includes selectively removing portions of a buried oxide layer and first semiconductor layer in an SOI substrate having the first semiconductor layer formed above a semiconductor substrate with the buried oxide layer disposed therebetween and exposing part of the semiconductor substrate, removing an exposed region of the semiconductor substrate in a depth direction, and burying a second semiconductor region in the region from which part of the semiconductor substrate has been removed in the depth direction.
