In a solid-state image sensing apparatus, each pixel includes a photodiode, a MOS amplifier whose gate receives photo-charge generated by the photodiode, and a MOS switch for controlling connection between the photodiode and the gate of the MOS amplifier, and transference of the photo-charge from the photodiode to the gate of the MOS amplifier is performed under a condition that a channel is formed under the gate of the MOS amplifier.
The invention concerns a device for measuring a radiofrequency magnetic field, characterised in that it comprises on a common support (10): a coil forming a primary reception antenna; a voltage-controlled oscillator, monitored so that its output frequency depends on the amplitude of the magnetic field received on the coil forming primary antenna; an absorption modulation load connected to the oscillator output; a secondary antenna (22) sensitive to the magnetic field influenced by the absorption modulation resulting from the power supply load by the voltage-controlled oscillator, and means (30) for operating the available signal on the secondary antenna (22).
The invention concerns a device for measuring a radiofrequency magnetic field, characterised in that it comprises on a common support: a coil forming a primary reception antenna; a voltage-controlled oscillator, monitored so that its output frequency depends on the amplitude of the magnetic field received on the coil forming primary antenna; an absorption modulation load connected to the oscillator output; a secondary antenna sensitive to the magnetic field influenced by the absorption modulation resulting from the power supply load by the voltage-controlled oscillator, and means for operating the available signal on the secondary antenna.
Provided is an amplification type solid state image pickup device capable of increasing a saturation charge amount even when an increase in circuit scale is suppressed. In a pixel of the amplification type solid state image pickup device, a power source voltage is supplied to a signal output line to change a potential of the signal output line at transfer operation that a signal charge accumulated in a photo diode is transferred to a gate of an amplification transistor. Then, a potential of an FD portion which is capacitively coupled to the signal output line and used for supplying the signal charge to the gate of the amplification transistor increases, so that the saturation charge amount can be set to a large value.
An image sensor includes a plurality of pixels for capturing incident light that is converted to a signal representing an image; wherein noise is combined with a signal representing both the image and a reset level; a plurality of dark reference pixels that generate noise that substantially correspond or equally correspond to the noise in the image and reset level; and a sample and hold circuit that reads out the image signal and cancels or substantially cancels out the noise from the image signal and reset level by canceling the noise from image and reset level with the noise generated from the dark reference pixels.
It is a principle object of the present invention to reduce a voltage drop of a common power supply wiring in a plurality of amplification circuits to suppress crosstalk generated in other signal output lines. A photoelectric conversion device includes: a plurality of pixels each having a photoelectric conversion area; a plurality of signal output lines through which electrical signals are to be read out from the plurality of pixels; and a plurality of amplification circuits provided in correspondence to the plurality of signal output lines for amplifying the electrical signals, respectively, the plurality of amplification circuits, including at least one constant current circuit portion and being disposed in a predetermined direction of repetitive dispersion, in which a constant current circuit portion includes at least a source grounded field effect transistor (the gate electrode is designated by reference symbol 124G), and a direction (X-axis direction) of a channel length of the source grounded field effect transistor is different from the direction of repetitive disposition of the amplification circuits.