A capacitor includes a semiconductor substrate, a bottom conductive pattern, first to third insulating layers, first to third metal plates and a connecting pattern. The bottom conductive pattern is formed on the semiconductor substrate. The first to third insulating layers are formed on the bottom conductive pattern, the first and second metal plates, respectively. The first metal plate is formed on the first insulating layer within a first area. The first metal plate is electrically connected to the bottom conductive pattern. The second metal plate is formed on the second insulating layer within the first area. The second metal plate has an opening in the center thereof. The third metal plate is formed on the third insulating layer. The connecting pattern is formed through the second and third insulating layers and the opening of the second metal plate. The connecting pattern electrically connects the first and the third metal plate.
CROSS-REFERENCE TO RELATED APPLICATIONS
A claim of priority is made to U.S. provisional application Ser. No. 60/421,779, filed Oct. 29, 2002, the entire contents of which are incorporated herein by reference.
A capacitor array comprising a plurality of unit capacitors, each having first and second electrode plates. The first electrode plates are commonly connected via first routings. The second electrode plates are grouped and connected to a plurality of nodes via second routings. The second routings connected to one node and another do not overlap in the capacitor array. The second electrode plates connected to the same node conglomerate as a group and no second electrode plate connected to another node is located in the group.
A digital capacitor array with individually shielded unit capacitors and combination binary--thermometer coded addressing is disclosed. Such a capacitor array may be part of a digitally controlled oscillator in a MEMS-based frequency reference.
A semiconductor device having a plurality of layers and a capacitor array that includes a plurality of individual capacitors. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections and capacitances of the plurality of individual capacitors in the capacitor array. The semiconductor device may include a metal structure disposed within the device to provide an electromagnetic shield for at least one of the plurality of individual capacitors in the capacitor array.
A semiconductor device having a plurality of layers and a plurality of circuit elements arranged in tiles. At least one of the plurality of layers in the semiconductor device may be a via layer configured to determine the connections of the plurality of circuit elements. The semiconductor device may include an interconnection quilt having a plurality of metal layers disposed to interconnect the plurality of circuit elements. The plurality of circuit elements may be analog circuit element and/or digital circuit elements. The tiles may be analog tiles and digital tiles that form a mixed signal structured array.
