Porous thermoset dielectric materials having low dielectric constants useful in electronic component manufacture are provided along with methods of preparing the porous thermoset dielectric materials. Also provided are methods of forming integrated circuits containing such porous thermoset dielectric material.
A porous film-forming composition comprising (A) a curable silicone resin having a Mn of at least 100, (B) a micelle-forming surfactant, and (C) a compound which generates an acid upon pyrolysis remains stable during storage. The composition is coated and heat treated to form a porous film which has flatness, uniformity, a low dielectric constant and a high mechanical strength so that it is best suited as an interlayer dielectric film in the fabrication of semiconductor devices.
A resistor heater includes an anode (10) arranged along one side and a cathode (20) arranged along the other side of a thin-line-shaped resistor (30). The anode (10) is connected to the resistor (30) at connections points (P2, P3) by a plurality of branches (13, 14) arranged at a certain interval along the resistor (30). The cathode (20) is connected to the resistor (30) at connection points (P1, P4) by branches (23, 24) arranged at a certain interval along the resistor (30). The connection points (P1, P4) are located at positions shifted from one another along the resistor (30). A portion (31) of the resistor (30) located between the connections points (P1, P2) and a portion (32) of the resistor (30) located between the connection points (P3, P4) function as effective regions of the resistor (30).
