or
Bookmark and Share
Production method of semiconductor device
   
Document Number
US Patent 7001841
Issued Date
February 21, 2006
Link
Map
Abstract
After a thin first conductive film is formed on a barrier film having a crystal structure, a second conductive film is formed on the first conductive film. Thereafter, the first conductive film and the second conductive film are heated such that the first and second conductive films are integrated to form a third conductive film.
Tags:
Description:
Amusing 0%
Clever 0%
Complex 0%
Efficient 0%
Historic 0%
Important 0%
Innovative 0%
Interesting 0%
Practical 0%
Simple 0%
Number of Claims:
35
Comments:
no comments yet
Published
February 21, 2006
Application Number
10/643,980
Filed
August 20, 2003
US Classification
438/660   257/E21.584 257/E21.585 438/643 438/687
Int'l Classification
H01L   21/44   (20060101)  
Attorney/Law Firm
Priority Data
Aug 26, 2002 [JP] 2002-245509
USPTO Field of Search
438/660   438/687   438/643   438/648  
Related Patents
Claims
Description
About| FAQs| Terms & Disclaimer| Link to Us| Contact Us