An intermediate substrate includes a substrate core formed by a main core body portion constructed of a sheet of polymer material and having a subsidiary core accommodation portion formed therein. A ceramic subsidiary core portion, which is constructed of a ceramic sheet, is accommodated in the subsidiary core accommodation portion and is of a thickness matching that of the main core body portion. A thin film capacitor is formed on a first main surface side of a plate-like base of the core portion and includes first and second thin film electrodes separated from each other by a thin film dielectric layer so as to provide direct current isolation between the electrodes. First and second direct current isolated terminals of a first terminal array are electrically connected to the first and second thin film electrodes.
A via array capacitor including a capacitor body having a first main surface and a second main surface and having a structure in which dielectric layers and inner electrode layers are alternately laminated; a plurality of via conductors which conduct the inner electrode layers to each other and are, as a whole, arranged in array form; and metal-containing layers which are disposed on at least one of the first main surface and the second main surface, wherein a total volume of the inner electrode layers and the metal-containing layers included in the via array capacitor is from 45 vol.% to 95 vol.% of a volume of the via array capacitor.
A wiring board includes a substrate core, ceramic capacitors and a built-up layer. The substrate core has a housing opening portion therein which opens at a core main surface. The ceramic capacitors are accommodated in the housing opening portion and oriented such that the core main surface and a capacitor main surface of each capacitor face the same way. The built-up layer includes semiconductor integrated circuit element mounting areas at various locations on a surface thereof. In the substrate core, each ceramic capacitor is respectively disposed in an area corresponding to each semiconductor integrated circuit element mounting area.
A wiring board includes a plurality of via pads disposed on a ceramic sub-core accommodated in a core board. A Cu-plated layer is formed on the surface of a conductor pad and serves as a processed face, i.e., a face to which Cu surface chemical processing is applied in order to improve the adhesion between the surface of the Cu-plated layer and that of an adjacent polymer material. The lowermost dielectric layer of a laminated wiring portion, and a via conductor formed in the dielectric layer, are in electrical contact with the processed face.
A multilayer wiring substrate for providing a capacitor structure inside a multilayer wiring structure is disclosed. The multilayer wiring substrate includes a dielectric layer including a resin material mixed with an inorganic filler, wherein the inorganic filler is fabricated by mixing a paraelectric filler with an inorganic filler having a high dielectric constant.
A microsystem-on-a-chip comprises a bottom wafer of normal thickness and a series of thinned wafers can be stacked on the bottom wafer, glued and electrically interconnected. The interconnection layer comprises a compliant dielectric material, an interconnect structure, and can include embedded passives. The stacked wafer technology provides a heterogeneously integrated, ultra-miniaturized, higher performing, robust and cost-effective microsystem package. The highly integrated microsystem package, comprising electronics, sensors, optics, and MEMS, can be miniaturized both in volume and footprint to the size of a bottle-cap or less.
