A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method includes removal of substance relating to part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to a method of producing a donor wafer which can be recycled according to the invention, methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, and donor wafers which can be recycled according to the invention.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of International Application PCT/IB2003/004143 filed Aug. 26, 2003, and claims the benefit of U.S. provisional application No. 60/431,928 filed Dec. 9, 2002.
A method of forming a structure that includes a removed layer taken from a donor wafer donor wafer that includes a first layer of Si.sub.1-xGe.sub.x and a second layer of Si.sub.1-yGe.sub.y. The method includes implanting atomic species into the donor wafer to form a zone of weakness in the first layer; bonding the donor wafer to a receiver wafer; detaching the second layer and a portion of the first layer from the donor wafer by supplying energy sufficient to cause cleavage and form an intermediate structure thereof conducting a rapid thermal anneal of the intermediate structure at a temperature of about 1000.degree. C. or more for less than 5 minutes; and removing by selective etching any remaining portions of the first layer of the intermediate structure to provide a semiconductor structure that has the second layer on the receiving wafer.
