The differential pressure sensor is formed of a semiconductor substrate (1) which is thinned out in an inner region into a membrane (2) which may be impinged by pressure on both sides. Measurement resistances (3a to 3d) for detecting the differential pressure (P.sub.1 minus P.sub.2) are formed within the membrane (2), and compensation resistances (4) are formed on the carrier, which are connected to measurement resistances (3). The measurement resistances (3) are connected into a first measurement bridge (6) and the compensation resistances (4a to 4d) into a second measurement bridge (7).
