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Liquid-jet head, method of manufacturing the same, and liquid-jet apparatus
   
Document Number
US Patent 7018023
Issued Date
March 28, 2006
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Abstract
Provided are a liquid-jet head in which a passage-forming substrate and a nozzle plate can be suitably joined, a method of manufacturing the same, and a liquid-jet apparatus. A covering plate has a piezoelectric element holding portion which covers piezoelectric elements. This covering plate is joined with a side of the passage-forming substrate where the piezoelectric elements are provided. At the same time, the nozzle plate provided with nozzle orifices is joined with a side of the passage-forming substrate opposite the side where the covering plate is joined. Moreover, at least a region of the passage-forming substrate facing the piezoelectric element holding portion is formed to be relatively thicker than the outside of the region facing the piezoelectric element holding portion.
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Number of Claims:
6
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Owner
Published
March 28, 2006
Application Number
10/679,515
Filed
October 7, 2003
US Classification
347/71   347/68 347/70 347/72
Int'l Classification
B41J   2/02   (20060101)  
Examiner
Assistant Examiner
Attorney/Law Firm
Priority Data
Oct 08, 2002 [JP] 2002-295340 Aug 12, 2003 [JP] 2003-292369 Oct 03, 2003 [JP] 2003-345463
USPTO Field of Search
347/68   347/69   347/70   347/71   347/72   29/25.35   29/890.1  
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7497962 - Method of manufacturing liquid discharge head and method of manufacturing substrate for liquid discharge head - Owned by Canon Kabushiki Kaisha (Tokyo,JP)

A method of manufacturing a liquid discharge head, which includes a pressure generating chamber, a discharge port, and a piezoelectric element formed of a pair of electrode films sandwiching a piezoelectric material film, includes steps of preparing a structure with a single crystal Si layer accumulated above a front surface of an Si substrate through an etching stop layer; forming a buffer layer on the single crystal Si layer; forming, above the buffer layer, the piezoelectric material film which is directed in a preferential orientation to a direction of the polarization through one of the pair of electrode films; forming the pressure generating chamber on the piezoelectric material film; and etching a location corresponding to the piezoelectric material film of the Si substrate from a rear surface of the Si substrate to reach the etching stop layer.

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