A polishing pad (104, 300) having an annular polishing track (152, 320) and a plurality of groups (160, 308) of grooves (112, 304) repeated circumferentially about the rotational center (128) of the pad. The plurality of grooves in each group are arranged along a trajectory (164, 312) in an offset and overlapping manner so as to provide a plurality of overlapping steps (172, 316) within the annular polishing track. The groups may be arranged in spaced-apart or nested relation with one another.
A rotational chemical mechanical polishing pad designed for use with a polishing medium. The polishing pad includes a polishing layer having a polishing surface containing a plurality of grooves. At least a portion of each of the plurality of grooves has a shape and orientation determined as a function of the trajectory of the polishing medium during use of the pad.
A polishing pad (200) that includes a polishing layer (204) having a polishing region (208) for polishing a wafer (220). The polishing layer includes a set of inflow grooves (232) that extend into the polishing region and a set of outflow grooves (236) that extend out of the polishing region. The inflow and outflow grooves cooperate with one another to enhance the utilization of a polishing slurry during polishing of the wafer.
A chemical mechanical polishing pad having an annular polishing track and a concentric center O. The polishing pad includes a polishing layer having a plurality of pad grooves formed therein. The polishing pad is designed for use with a carrier, e.g., a wafer carrier, that includes a polishing ring having a plurality of carrier grooves. Each of the plurality of pad grooves has a carrier-compatible groove shape configured to enhance the transport of a polishing medium beneath the carrier ring on the leading edge of the carrier ring during polishing.
