In accordance with an embodiment of the invention, a Schottky diode includes a metal layer in contact with a semiconductor region to form a Schottky barrier therebetween. A first trench extends in the semiconductor region. The first trench includes at least one electrode or diode therein.
CROSS-REFERENCES TO RELATED APPLICATIONS
This application is a continuation-in-part of: (1) U.S. application Ser. No. 10/288,982, filed Nov. 5, 2002, entitled "Trench Structure Having One or More Diodes Embedded Therein Adjacent a PN Junction and Method of Forming the Same", and (2) U.S. application Ser. No. 10/666,034, filed Sep. 18, 2003, entitled "Method for Forming a Semiconductor Structure with Improved Smaller Forward Voltage Loss and Higher Blocking Capability" which is a divisional application of U.S. application Ser. No. 09/981,583, filed on Oct. 17, 2001, issued as U.S. Pat. No. 6,677,641, which disclosures are incorporated herein by reference.
