Provided is a method for manufacturing a fixed abrasive material suitable for use in CMP planarization pads from an aqueous polymer dispersion that also includes abrasive particles that involves frothing the polymer dispersion, applying the froth to a substrate, mold or carrier and curing the froth to form a fixed abrasive material having an open cell structure containing between about 5 and 85 wt % abrasive particles and a dry density of about 350 kg/m.sup.3 to 1200 kg/m.sup.3.
A chemical mechanical polishing (CMP) method is disclosed for use in the fabrication of a semiconductor device having dense and sparse regions. The method uses an abrasive stop layer formed on the dense and sparse regions to control polishing of a material layer formed on the abrasive stop layer by a rigid, fixed abrasive polishing pad.
The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.
