Transistors fabricated with transparent oxide semiconductors are provided. The semiconductors are metal oxides deposited without the intentional incorporation of additional doping elements, and enable the fabrication of transparent thin film transistors. The transparent transistors can be used to control pixels in a display, without significantly reducing the active area of the pixels.
A method for depositing a seed layer for a controllable electric pathway on a substrate includes selectively dispensing a seed material from an inkjet material dispenser onto said substrate.
A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.
To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.
