A method for the production of individual integrated circuit arrangements from a wafer composite is disclosed, whereby the wafer is fixed with the component side (FS) on a support, the individual circuit arrangements (21) are separated on the support body by the etching of separating trenches (27) and individually lifted from the support body. The semiconductor substrate (20) is reduced in thickness during the fixing of the wafer to the support body, preferably to a substrate thickness of less than 100 .mu.m. A reverse face metallization (31) is deposited on the back face (RS) of the thinned substrate, preferably after separation of the circuit arrangements on the support body.
