A method of interconnecting and an interconnect is provided to connect a first component and a second component of an integrated circuit. The interconnect includes a plurality of Carbon Nanotubes (CNTs), which provide a conducting path between the first component and the second component. The interconnect further includes a passivation layer to fill the gaps between adjacent CNTs. A method of producing Anisotropic Conductive Film (ACF) and an ACF is provided. The ACF includes a plurality of CNTs, which provide a conducting path between a first side of the ACF and a second side of the ACF. The sides of the ACF can also include a conductive curable adhesive layer. In an embodiment, the conductive curable adhesive layer can incorporate a B-stage cross-linkable polymer and silver particles.

Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes (SWNTs) on a catalyst-free substrate, by injection of microwave power into a deposition chamber comprising a magnetic confinement structure with a magnetic mirror, and at least one electron cyclotron resonance area inside or at the border of the deposition chamber and facing the substrate, whereby dissociation and/or ionization of a gas containing carbon is caused, at a pressure of less than 10.sup.-3 mbars, in the magnetic mirror at the center of the deposition chamber, producing species that will be deposited on said heated substrate. The substrate surface includes raised and/or lowered reliefs. The invention concerns the SWNTs thus obtained.

A method of batch fabrication using established photolithographic techniques allowing nanoparticles or nanodevices to be fabricated and mounted into a macroscopic device in a repeatable, reliable manner suitable for large-scale mass production. Nanoparticles can be grown on macroscopic "modules" which can be easily manipulated and shaped to fit standard mounts in various devices.