A flying type thin-film magnetic head includes a write head element with a coil conductor and a yoke, a write current flowing through the coil conductor, an overcoat layer laminated on the write head element, and a heat-block layer formed in the overcoat layer and made of a material with a heat conductivity that is lower than a heat conductivity of the overcoat layer.
A magnetoresistive read/write head having a first layer of alumina and a second layer of silicon dioxide overlaying a P3 layer of the head. In a preferred embodiment, the silicon dioxide layer is recessed away from an Air Bearing Surface (ABS) to reduce protrusion of a P2 layer and the P3 layer in the head, and to reduce degradation in the magnetic properties of the pole tips of the P2 and P3 layer ends.
Embodiments of the invention achieve a decrease in electric power consumption while ensuring high recording density and high reliability in a magnetic disk apparatus. In one embodiment, a magnetic disk apparatus comprises a rotatable magnetic disk and a magnetic head slider to be able to fly above a surface of the magnetic disk. The magnetic head slider comprises an air bearing surface, by which the magnetic head slider is caused to fly and come near to the rotating surface of the magnetic disk with a predetermined spacing therebetween, recording and reproducing elements to perform at least one of recording on and reproduction from the magnetic disk, and a heating device to adjust a distance between the recording and reproducing elements and the surface of the magnetic disk. The heating device is mounted such that heating thereof causes a part of the air bearing surface to expand and project to increase a distance between the recording and reproducing elements and the surface of the magnetic disk.
A giant magnetoresistive (GMR) head is formed to include a recess in an overcoat layer that reduces stress on the poles. The process includes depositing a seed layer over the overcoat layer prior to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom is etched in the overcast layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.
