A circuit device includes at least one under bump metal formed on a surface of a substrate and a connection bump provided on the uppermost layer of the under bump metal. At least one laminated metallic film is formed on part of or all of wiring pattern formed on the surface of the substrate, so that the laminated metallic film formed consists of the same material and has the same thickness as the under bump metal.
A light emitting diode including a substrate, a semiconductor layer, multiple electrodes, a passivation layer, multiple under bump metallurgy (UBM) layers and a reflective layer is provided. The semiconductor layer is disposed on the substrate. The electrodes and the passivation layer are disposed on the semiconductor layer. The passivation layer has multiple openings for exposing the electrodes. The UBM layers are disposed on the electrodes. The reflective layer is disposed on the passivation layer. The reflective layer is electrically isolated from the electrodes and the UBM layers. A method of fabricating the light emitting diode is also provided. The reflective layer and the UBM layers are fabricated simultaneously in one process. Therefore, the fabricating method is compatible with the existing process.
