Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.
This application claims the benefit of provisional application Ser. No. 60/460,791, filed on Apr. 5, 2003, and provisional application Ser. No. 60/513,475, filed on Oct. 22, 2003, and provisional application Ser. No. 60/513,476, filed on Oct. 22, 2003.
