A capacitance coupled, transmission line-fed, radio frequency MEMS switch and its fabrication process using photoresist and other low temperature processing steps are described. The achieved switch is disposed in a low cost dielectric housing free of undesired electrical effects on the switch and on the transmission line(s) coupling the switch to an electrical circuit. The dielectric housing is provided with an array of sealable apertures useful for wet, but hydrofluoric acid-free, removal of switch fabrication employed materials and also useful during processing for controlling the operating atmosphere surrounding the switch--e.g. at a pressure above the high vacuum level for enhanced switch damping during operation. Alternative arrangements for sealing an array of dielectric housing apertures are included. Processing details including plan and profile drawing views, specific equipment and materials identifications, temperatures and times are also disclosed.
CLAIM OF PRIORITY
This application claims the benefit of U.S. Provisional Application No. 60/573,892 filed May 24, 2004. The contents of this provisional application are hereby incorporated by reference herein.
A method and an apparatus of fabricating a liquid crystal display device adapted to improve a lift-off efficiency are disclosed. The liquid crystal display device is also disclosed. The method includes forming a first thin film on a substrate; forming a photo-resist pattern on the first thin film; etching the first thin film using the photo-resist pattern as a mask; forming a second thin film on the substrate having the photo-resist pattern; forming a plurality of stripper infiltration paths; and removing the photo-resist pattern and the second thin film using a stripper within the stripper infiltration paths. The device includes two substrates facing each other; a liquid crystal layer; data lines and gate lines that cross each other to define pixel regions; thin film transistors; pixel electrodes connected to the thin film transistors; and an inorganic layer in each pixel region, wherein the inorganic layer includes a plurality of cracks.
A microelectromechanical systems device having an electrical interconnect between circuitry outside the device and at least one of an electrode and a movable layer within the device. A layer of the electrical interconnect is formed directly under, over, or between a partially reflective layer and a transparent layer of the device. The layer of the electrical interconnect preferably comprises nickel.
A microelectromechanical systems device having an electrical interconnect between circuitry outside the device and at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a conductive layer between the electrode and a mechanical layer of the device. In an embodiment, this conductive layer is a sacrificial layer that is subsequently removed to form a cavity between the electrode and the movable layer. The sacrificial layer is preferably formed of molybdenum, doped silicon, tungsten, or titanium. According to another embodiment, the conductive layer is a movable reflective layer that preferably comprises aluminum.
Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.
