A method for forming a metal-insulator-metal device includes imprinting at least one first layer to form a first impression, removing a portion of at least one second layer through the first depression to form a recess in the at least one second layer bordered by a first side, a first overhang along the first side, a second opposite side and a second overhang along the second side. The method also includes depositing a first metal in the recess spaced from the first side and the second side and oxidizing the first metal to create a non-linear dielectric.
