A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor layer and a contacting of the n-semiconductor layer are arranged on the same main surface of the semiconductor substrate so that an integration with an integrated capacitor, an integrated resistor and/or an integrated inductor is possible.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of copending International Application No. PCT/EP02/13138, filed Nov. 22, 2002, which designated the United States and was not published in English.
A passive matching network is connected to an input/output line for an automatic test equipment drive channel to compensate for capacitances associated with a receiver circuit connected to the line, and also an optional current-mode driver circuit. The matching circuit preferably comprises a T-coil circuit that can include a bridging capacitor; separate T-coil circuits can be provided to separately compensate for receiver circuit and current-mode driver circuit capacitances. The driver and receiver circuits can be implemented on a common layer of an integrated circuit, with the T-coil windings implemented in a separate layer of the same integrated circuit that is spaced from the common layer by at least one dielectric layer.
