Method of plating a metal or metal compound on a semiconductor substrate that includes using the same main component in both plating and etching solutions
A method of forming a copper oxide film including forming a copper oxide film including an ammonia complex by causing a mixed solution of aqueous ammonia and aqueous hydrogen peroxide, which has been adjusted to have pH of 8 to 10 or pH of 9 to 10, to contact a surface of a copper film. A method of fabricating a semiconductor device including burying a copper film to be a wiring or a contact wiring in a wiring groove or a contact hole formed in a surface of an insulating film formed on a semiconductor substrate, or in both the wiring groove and the contact hole, forming a copper oxide film including an ammonia complex on a surface of the copper film by using the copper oxide film forming method, and removing the copper oxide film from the copper film using acid or alkali.
CROSS-REFERENCE TO RELATED APPLICATION
This is a continuation of application Ser. No. 10/233,582, filed Sep. 4, 2002 (now U.S. Pat. No. 6,818,556), which is continuation of application Ser. No. 09/865,569, filed May 29, 2001 (now issued U.S. Pat. No. 6,475,909), which is a divisional of application Ser. No. 09/494,025, filed Jan. 31, 2000 (now issued U.S. Pat. No. 6,261,953), which claims priority of Japanese Patent Application No.2000-015653, filed Jan. 25, 2000, all of which are incorporated herein by reference.
