An integrated circuit structure includes providing a semiconductor substrate and forming a trench therein. A thyristor is formed around the trench and within the semiconductor substrate. The thyristor has at least four layers with three P-N junctions therebetween. A gate for the thyristor is formed within the trench. An access transistor is formed on the semiconductor substrate. An interconnect is formed between the thyristor and the access transistor.
CROSS-REFERENCE TO RELATED APPLICATION(S)
This is a divisional of application Ser. No. 10/752,357 filed Jan. 5, 2004, now U.S. Pat. No. 7,081,378, which is hereby incorporated by reference thereto.
