An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of U.S. patent application Ser. No. 10/702,437, filed Nov. 7, 2003, which, in turn, is a divisional of U.S. application Ser. No. 09/749,377, filed Dec. 28, 2000, now U.S. Pat. No. 6,690,065. The entire disclosure of both prior applications are incorporated herein by reference.
