A memory capable of suppressing disturbance causing disappearance of data from a nonselected memory cell is provided. This memory applies a second voltage of polarity reverse to that of a first voltage applied to a nonselected memory cell in a read operation to at least the nonselected memory cell in addition to the read operation collectively performed on all memory cells connected to a selected word line.
A memory capable of inhibiting a non-selected cell from disturbance is provided. This memory comprises a bit line, a word line arranged to intersect with the bit line and first storage means connected between the bit line and the word line, for applying voltages of opposite directions to the first storage means of a non-selected memory cell by the same number of times or substantially applying no voltages throughout a read operation and a rewrite operation while varying a rewriting method with a case of reading first data by the read operation and with a case of reading second data by the read operation.
