Methods of forming thin-film transistor display devices including forming a gate line and a gate electrode on a face of a substrate and forming a semiconductor layer that is insulated from the gate line. A data line and a source/drain electrode are formed on the semiconductor layer. The data line and the source/drain electrode are formed as composites of at least two different metal conductive layers. A transparent pixel electrode is formed that is electrically coupled to the drain electrode.
REFERENCE TO PRIOR-FILED APPLICATIONS
This application is a continuation of U.S. application Ser. No. 10/406,668, filed Apr. 3, 2003, now U.S. Pat. No. 6,878,966, which is a divisional of U.S. application Ser. No. 10/092,282, filed Mar. 6, 2002, now U.S. Pat. No. 6,566,686, which is a continuation of U.S. application Ser. No. 09/770,576, filed Jan. 26, 2001, now U.S. Pat. No. 6,383,831, which is a divisional of U.S. application Ser. No. 08/808,886, filed Feb. 28, 1997, now U.S. Pat. No. 6,087,678, the disclosures of which are hereby incorporated herein by reference.
