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System for and method of forming via holes by use of selective plasma etching in a continuous inline shadow mask deposition process
   
Document Number
US Patent 7268431
Issued Date
September 11, 2007
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Abstract
In a shadow mask vapor deposition system, a first conductor is vapor deposited on a substrate and an insulator is vapor deposited on the first conductor. A second conductor is then vapor deposited on at least the insulator. The insulator layer is plasma etched either before or after the vapor deposition of the second conductor to define in the insulator layer a via hole through which at least a portion of the first conductor is exposed. An electrical connection is established between the first and second conductors by way of the via hole.
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Number of Claims:
20
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Published
September 11, 2007
Application Number
11/026,365
Filed
December 30, 2004
US Classification
257/758   257/E21.577 257/E21.585 438/637 438/675
Int'l Classification
H01L   23/52   (20060101)  
Examiner
Attorney/Law Firm
USPTO Field of Search
257/758  
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