Methodologies associated with fabricating aligned nanowire lattices are described. One exemplary method embodiment includes providing a twist wafer bonded thin single crystal semiconductor film and a bulk single crystal substrate of the same material. Periodic non-uniform elastic strains present on the surface of the film control the positions where nanocrystals will form on the film. The strains may be removed via annealing and alloying after the formation of nanocrystal arrays.
A mounting method of the present invention includes the steps of: (I) disposing a first liquid in a first region provided on one principal surface of a substrate; (II) bringing a pillar-like member as an anisotropically-shaped member, disposed on one principal surface of a transfer substrate in a predetermined orientation, into contact with the first liquid disposed in the first region, so as to move the pillar-like member to a region of the first liquid; and (III) removing the first liquid from the substrate.
