Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.
This application is a divisional of U.S. patent application Ser. No. 10/893,299, filed Jul. 19, 2004, now U.S. Pat. No. 7,190,048, the entirety of which is hereby incorporated by reference herein.
