A silicon-based interband tunneling diode (10, 110) includes a degenerate p-type doping (22, 130) of acceptors, a degenerate n-type doping (32, 118) of donors disposed on a first side of the degenerate p-type doping (22, 130), and a barrier silicon-germanium layer (20, 136) disposed on a second side of the degenerate p-type doping (22, 130) opposite the first side. The barrier silicon-germanium layer (20, 136) suppresses diffusion of acceptors away from a p/n junction defined by the degenerate p-type and n-type dopings (22, 32, 118, 130).
This application claims the benefit of U.S. Provisional Application Ser. No. 60/492,039 filed on Aug. 1, 2003. This application is a continuation-in-part application of U.S. application Ser. No. 09/934,334 filed Aug. 21, 2001, which is a divisional application of U.S. application Ser. No. 09/565,455 filed May 5, 2000 which issued as U.S. Pat. No. 6,803,598 on Oct. 12, 2004, which claims the benefit of U.S. Provisional Application Ser. No. 60/133,067 filed May 7, 1999.
U.S. Provisional Application Ser. No. 60/492,039 is incorporated by reference herein in its entirety. U.S. patent application Ser. No. 09/934,334, filed on Aug. 21, 2001 and published as US 2003-0049894 A1 on Mar. 13, 2003, is incorporated by reference herein in its entirety.
