Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the substrate. The substrate is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space and a pulse voltage is applied on the substrate without substantially applying a direct bias voltage on the substrate to form the thin film on the inner wall surface.
This application is a non-provisional application of U.S. provisional application 60/457,310 filed on Mar. 26, 2003, and Japanese patent application 2003-38,767, filed on Feb. 17, 2003, the entireties of which are incorporated by reference.
