A semiconductor component includes a semiconductor substrate having a substrate contact on a circuit side thereof in electrical communication with an integrated circuit, and a through interconnect in physical and electrical contact with the substrate contact configured to provide a signal path to a back side of the semiconductor substrate. The through interconnect includes an opening in the semiconductor substrate aligned with the substrate contact, and a projection on an interposer substrate (or alternately on a second semiconductor substrate) configured for mating physical engagement with the opening in the semiconductor substrate. The projection can also include a conductive via configured for electrical contact with a backside of the substrate contact and with a terminal contact for the component.

A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire. A system for fabricating the semiconductor component includes a bonding capillary configured to place the wire in the via, and to form a bonded connection between the wire and the substrate contact.