Disclosed are a method for removing a photoresist layer and a method for forming a metal line using the same. The method for removing a photoresist pattern, including the steps of: forming a bottom layer on a substrate by using the photoresist pattern as a mask; and removing the photoresist pattern with use of a high density plasma (HDP) apparatus. The method for forming a metal line, including the steps of: preparing a semi-finished substrate including an inter-layer insulation layer; forming a photoresist pattern on the inter-layer insulation layer; forming an opening by etching the inter-layer insulation layer with use of the photoresist pattern as an etch mask; removing the photoresist pattern by using a high density plasma (HDP) apparatus; and forming the metal line by filling the opening with a predetermined material.
