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Over-current detection for a power field-effect transistor (FET)
   
Document Number
US Patent 7317355
Issued Date
January 8, 2008
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Abstract
A system and method is provided for detecting an over-current condition in a power field-effect transistor (FET). In one embodiment, an over-current detection circuit for detecting an over-current condition in a power FET comprises a current generator circuit operative to generate a reference current and a plurality of matched FETs operative to receive the reference current and provide a reference voltage, the matched FETs being matched to each other and to the power FET. The over-current detection circuit also comprises a comparator operative to measure a drain-to-source voltage of the power FET and to provide an output that indicates that the drain-to-source voltage of the power FET has exceeded the reference voltage.
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Number of Claims:
24
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Published
January 8, 2008
Application Number
11/125,968
Filed
May 10, 2005
US Classification
330/251   330/207A
Int'l Classification
H03F   3/217   (20060101)  
USPTO Field of Search
330/207A   330/251   330/288  
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