A thin film of zinc oxide is deposited by sputter deposition in a partial pressure of oxygen on a suitable at a low temperature, such as less than 300 degrees Centigrade, to provide an amorphous film. This should take place in a sputtering environment which will produce an oxygen deficient film layer. After this, the film is crystallized by heat treatment in an oxygen free environment in a given temperature range. The thin film produced by this process will have very low electrical resistance, is transparent from about the visible to beyond 10 microns in wavelength, is highly resistant to laser energy and is highly conductive.
RELATED APPLICATIONS
This application is a refile of an application Ser. No. 09/566,366, filed on 8 May 2000, entitled Method of Making High Conductivity I-R Transparent Zinc Oxide Films and Films Therefrom, by the same inventors, now abandoned.
This Application is a Divisional of co-pending application, Ser. No. 10/134,997, filed on 30 Apr. 2002 now abandoned, having the same title.
