A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area can be a sidewall of one of the electrodes, or a perimeter edge of a contact opening through the electrode. Thus, when the thickness of the electrode is relatively thin, the contact area between the electrode and the phase changeable material pattern is relatively very small. As a result, it is possible to reduce power consumption of the phase changeable memory device and to form reliable and compact phase changeable memory cells.
RELATED APPLICATION
This application is a divisional of U.S. patent application Ser. No. 10/374,959, filed Feb. 25, 2003, now pending, which the contents of which are incorporated by reference.
